Title :
Analytical Modelling of the Kink Effect in MOS Transistors
Author :
Hafez, I.M. ; Ghibaudo, G. ; Balestra, F.
Author_Institution :
Laboratoire de Physique des Composants a Semiconducteurs, ENSERG, 23 rue des martyrs, B.P. 257, 38016 Grenoble, France.
Abstract :
An analytical model of the kink effect in MOS transistors is proposed. This model procures a comprehensive view of the kink effect in bulk silicon MOSFETs and, subsequently, in SOI devices. It is shown both experimentally and theoretically that the excess drain current induced by the kink effect is proportional to the body transconductance of the device operated at room as well as liquid helium temperatures.
Keywords :
Analytical models; Cause effect analysis; Dielectric liquids; Helium; MOSFETs; P-n junctions; Silicon on insulator technology; Temperature; Threshold voltage; Transconductance;
Conference_Titel :
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location :
Berlin, Germany
