Title :
Characterization and Simulation of SOI-CMOS Devices for 3D-integration
Author :
GÖtzlich, J. ; Kircher, R. ; Giesen, K. ; Poschl, G.
Author_Institution :
Siemens AG, Otto-Hahn-Ring 6, 8000 Mÿnchen 83, FRG
Abstract :
SOI MOSFETs were fabricated in argon laser recrystallized silicon layers. The SOI film thickness was varied between 100nm and 350 nm using a planarizing etch back technique. The electrical characteristics of the devices were compared with two-dimensional device simulations.
Keywords :
Argon; Circuits; Electric variables; Etching; MOSFETs; Planarization; Semiconductor films; Silicon; Temperature; Threshold voltage;
Conference_Titel :
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location :
Berlin, Germany
