Is There Anything Beyond the 64 MDRAM

Physical and economical constraints which provides obstacles for the improvement of VLSI technology beyond 64MDRAM or O. 3um, and the approach and physically new device concepts how to prevent these issues are discussed quantitatively as far as possible. Fundamentally, a MOS transistor can work at 0. 1um gate length probably on the chip level with IV power supply at 77K. SOI structure or precisely controlled channel engineering under the low temperature heat cycle is essentially important. New materials or new device concepts are substantially needed for a DRAM cell in future. Other physically new concepts or attempt which provides larger operational margin or better performance of a miniaturized device will also be discussed.