• DocumentCode
    1935201
  • Title

    High power device for the electric safety of metallic structures

  • Author

    Lingvay, Iosif ; Banu, Viorel ; Lingvay, Carmen ; Rauta, Ioana ; Apostolescu, Mihai ; Stoian, Florin

  • Author_Institution
    Inst. for Adv. Res. in Electr. Eng., Bucharest, Romania
  • Volume
    2
  • fYear
    2001
  • fDate
    37165
  • Firstpage
    547
  • Abstract
    A hybrid high-power solid-state device, voltage limiter and having a fast switching rate, has been conceived and built. The device copes in forward polarization with hazardous overcurrent impulses up to 1800 A for 1s and 120 to 40 A-depending on the type-also for 1s, in reverse polarization. The device was checked at lightning impulses (20/8 μs) at a peak current of 100,000 A. Due to its electric performances (in static, dynamic and switching regimes) the new device can be utilized in diverse applications such as: electric safety assurance for metallic structures, control of corrosion of underground metallic pipelines due to the electromagnetic pollution of the soil (DC and AC stray currents) also
  • Keywords
    Schottky diodes; Zener diodes; corrosion protection; fault current limiters; lightning protection; overcurrent protection; power semiconductor diodes; power semiconductor switches; safety; 40 to 100000 A; 8 mus to 1 s; AC stray currents; DC stray currents; corrosion control; electric safety; electric safety assurance; fast switching rate; forward polarization; hazardous overcurrent impulses; high-power Schottky diode; high-power Zener diode; hybrid high-power solid-state device; lightning impulses; metallic structures; power resistor; protection device; reverse polarization; underground metallic grids; underground metallic pipelines; urban utilities distribution; voltage limiter; Corrosion; Electrical safety; Electromagnetic devices; Lighting control; Lightning; Optical polarization; Pipelines; Safety devices; Solid state circuits; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 2001. CAS 2001 Proceedings. International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-6666-2
  • Type

    conf

  • DOI
    10.1109/SMICND.2001.967526
  • Filename
    967526