DocumentCode
1935280
Title
Reliability and Resistance Minimization Studies of the Laser Diffused Diode Links in Wafer-scale-integration
Author
Fang, P. ; Massiha, G.H. ; Chen, T.M. ; Cottle, J.G.
Author_Institution
Electrical Engineering Department, University Of South Florida, Tampa, Florida 33620
fYear
1989
fDate
11-14 Sept. 1989
Firstpage
837
Lastpage
840
Abstract
The reliability of the Laser-diffused Diode Links (LDL) has been studied. For low resistance devices the electromigration damages were found at the oxide steps as expected. However, for the high resistance devices, failures occurred around the device links. our study shows that the high resistance links failure can be related to the high joule heating enhanced Si electromigration.
Keywords
CMOS technology; Diodes; Electric resistance; Electromigration; Joining processes; Laser beams; Resistance heating; Scanning electron microscopy; Temperature; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location
Berlin, Germany
Print_ISBN
0387510001
Type
conf
Filename
5436471
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