DocumentCode :
1935280
Title :
Reliability and Resistance Minimization Studies of the Laser Diffused Diode Links in Wafer-scale-integration
Author :
Fang, P. ; Massiha, G.H. ; Chen, T.M. ; Cottle, J.G.
Author_Institution :
Electrical Engineering Department, University Of South Florida, Tampa, Florida 33620
fYear :
1989
fDate :
11-14 Sept. 1989
Firstpage :
837
Lastpage :
840
Abstract :
The reliability of the Laser-diffused Diode Links (LDL) has been studied. For low resistance devices the electromigration damages were found at the oxide steps as expected. However, for the high resistance devices, failures occurred around the device links. our study shows that the high resistance links failure can be related to the high joule heating enhanced Si electromigration.
Keywords :
CMOS technology; Diodes; Electric resistance; Electromigration; Joining processes; Laser beams; Resistance heating; Scanning electron microscopy; Temperature; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location :
Berlin, Germany
Print_ISBN :
0387510001
Type :
conf
Filename :
5436471
Link To Document :
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