DocumentCode :
1935322
Title :
A New Method of Interface Trap Modeling in Quantized MOSFET Inversion Layers
Author :
Siergiej, R.R. ; Yoon, S. ; White, M.H.
Author_Institution :
Sherman Fairchild Center for Solid State Studies, Lehigh University, Pa.
fYear :
1991
fDate :
17-19 June 1991
Keywords :
Charge pumps; Electron traps; Energy capture; Energy states; MOSFET circuits; Quantization; Semiconductor process modeling; Statistics; Surface treatment; Wave functions;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 1991. 49th Annual
Conference_Location :
Boulder, CO, USA
Print_ISBN :
0-87942-647-0
Type :
conf
DOI :
10.1109/DRC.1991.664732
Filename :
664732
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1935322
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