Thermally Activated Failure Modes and Mechanisms of High Electron Mobility Transistors

Author

Canali, Claudio ; Castellaneta, Giuseppe ; Magistral, Fabrizio ; Sangalli, Marco ; Tedesco, Carlo ; Zanoni, Enrico

Author_Institution

Universita´´ di Padova, Dipartimento di Elettronica ed Informatica, Via Gradenigo 6A, I-35131 Padova, Italy.

fYear

1989

fDate

11-14 Sept. 1989

Firstpage

813

Lastpage

816

Keywords

Degradation; Electron mobility; Gallium arsenide; HEMTs; MESFETs; MODFETs; Metallization; Schottky barriers; Schottky diodes; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Device Research Conference, 1989. ESSDERC '89. 19th European

Conference_Location

Berlin, Germany

Print_ISBN

0387510001

Type

Filename

5436477

Link To Document