Title :
Thermally Activated Failure Modes and Mechanisms of High Electron Mobility Transistors
Author :
Canali, Claudio ; Castellaneta, Giuseppe ; Magistral, Fabrizio ; Sangalli, Marco ; Tedesco, Carlo ; Zanoni, Enrico
Author_Institution :
Universita´´ di Padova, Dipartimento di Elettronica ed Informatica, Via Gradenigo 6A, I-35131 Padova, Italy.
Keywords :
Degradation; Electron mobility; Gallium arsenide; HEMTs; MESFETs; MODFETs; Metallization; Schottky barriers; Schottky diodes; Testing;
Conference_Titel :
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location :
Berlin, Germany
