• DocumentCode
    1935432
  • Title

    Dependence of the Propagation Delay of an ECL Gate on the Transistor and Circuit Parameters

  • Author

    Ghannam, M.Y. ; Mertens, R.P. ; Van Overstraeten, R.

  • Author_Institution
    Interuniversity MicroElectronics Center IMEC, Kapeldreef 75, Leuven, Belgium; Electronics and Communications Dept., Cairo University, Guiza, Egypt.
  • fYear
    1989
  • fDate
    11-14 Sept. 1989
  • Firstpage
    801
  • Lastpage
    806
  • Abstract
    The propagation delay T of an Emitter-Coupled-Logic (ECL) gate is studied as a function of the different device aind circuit. parameters involved. It is found that the delay in the response of the switching transistor is the dominant delay component. The propagation delay is highly sensitive to the change in the cut-off frequency and the magnitude of the current source. This sensitivity is, however, a strong function of the range in which these parameters are considered. The delay is also highly but monotically sensitive to the product of the base resistance with the collector junction capacitance. The results show a weaker sensitivity of the propagation delay to the voltage swing, to the collector to substrate capacitance and to the emitter junction capacitance. Finally, the delay is almost insensitive to the emitter resistance and to the current gain.
  • Keywords
    Capacitance; Computational modeling; Delay effects; Logic circuits; Logic gates; Petroleum; Physics computing; Propagation delay; Quantum computing; Switching circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
  • Conference_Location
    Berlin, Germany
  • Print_ISBN
    0387510001
  • Type

    conf

  • Filename
    5436479