• DocumentCode
    1935504
  • Title

    Analysis of the Punchthrough Effect in Walled Emitter Bipolar Transistors

  • Author

    Dubois, Emmanuel ; Baccus, Biuno ; Collard, Dominique

  • Author_Institution
    Institut Supérieur d´´Electronique du Nord, 41, Boulevard Vauban 59046 LILLE Cedex, France
  • fYear
    1989
  • fDate
    11-14 Sept. 1989
  • Firstpage
    789
  • Lastpage
    792
  • Abstract
    A detailed study of the punchthrough formation mechanism induced by the walled emitter configuration is proposed. Efficient process and device simulation tools -IMPACT- have been used and results have been successfully compared to measured characteristics.
  • Keywords
    Bipolar transistor circuits; Bipolar transistors; Character generation; Circuit simulation; Impurities; Mesh generation; Shape control; Shape measurement; Silicon; Solid modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
  • Conference_Location
    Berlin, Germany
  • Print_ISBN
    0387510001
  • Type

    conf

  • Filename
    5436482
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1935504