Title :
Analysis of the Punchthrough Effect in Walled Emitter Bipolar Transistors
Author :
Dubois, Emmanuel ; Baccus, Biuno ; Collard, Dominique
Author_Institution :
Institut Supérieur d´´Electronique du Nord, 41, Boulevard Vauban 59046 LILLE Cedex, France
Abstract :
A detailed study of the punchthrough formation mechanism induced by the walled emitter configuration is proposed. Efficient process and device simulation tools -IMPACT- have been used and results have been successfully compared to measured characteristics.
Keywords :
Bipolar transistor circuits; Bipolar transistors; Character generation; Circuit simulation; Impurities; Mesh generation; Shape control; Shape measurement; Silicon; Solid modeling;
Conference_Titel :
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location :
Berlin, Germany
