Title :
Modelling Forward-Biased Tunneling
Author :
Hurkx, G.A.M. ; O´Hara, F.G. ; Knuvers, M.P.G.
Author_Institution :
Philips Research Laboratories, 5600 JA Eindhoven, The Netherlands
Abstract :
A recombination model is presented that incorporates trap-assisted tunnelling in a Shockley-Read-Hall type formulation. This model is based an a simple quantum-mechanical treatment of the p-n junction. using the envelope-function approach. By comparison with experiments it is shown that the model agrees well with the measured reduced temperature dependence and large non-ideality factor associated with tunnelling currents in forward-biased junctions.
Keywords :
Charge carrier processes; Electron traps; Equations; Impurities; Laboratories; Nominations and elections; Numerical simulation; P-n junctions; Predictive models; Tunneling;
Conference_Titel :
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location :
Berlin, Germany
