DocumentCode
1935523
Title
Modelling Forward-Biased Tunneling
Author
Hurkx, G.A.M. ; O´Hara, F.G. ; Knuvers, M.P.G.
Author_Institution
Philips Research Laboratories, 5600 JA Eindhoven, The Netherlands
fYear
1989
fDate
11-14 Sept. 1989
Firstpage
793
Lastpage
796
Abstract
A recombination model is presented that incorporates trap-assisted tunnelling in a Shockley-Read-Hall type formulation. This model is based an a simple quantum-mechanical treatment of the p-n junction. using the envelope-function approach. By comparison with experiments it is shown that the model agrees well with the measured reduced temperature dependence and large non-ideality factor associated with tunnelling currents in forward-biased junctions.
Keywords
Charge carrier processes; Electron traps; Equations; Impurities; Laboratories; Nominations and elections; Numerical simulation; P-n junctions; Predictive models; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location
Berlin, Germany
Print_ISBN
0387510001
Type
conf
Filename
5436483
Link To Document