Microsecond plasma opening switch application for materials processing

Author

Bystritskii, V.M. ; Grigoriev, S.V. ; Lisitsyn, I.V. ; Mesyats, G.A. ; Sinebryukhov, A.A. ; Sinebryukhov, Vadim A.

Author_Institution

Inst. of Electrophy., Ekaterinburg, Russia

fYear

1993

fDate

7-9 June 1993

Firstpage

159

Abstract

Summary form only given. A novel approach to microsecond plasma opening switch (MPOS) application for a pulse power ion beam (PPIB) source is discussed. Characterization of the PPIB in the MPOS was made on a microsecond MARX generator (500 kV, 280 kA, 1 /spl mu/s) in both positive and negative polarities of the potential electrode. The ion-irradiated region at the MPOS cathode had a length of several tens of centimeters, significantly exceeding the initial plasma length. The ion flow current distribution along the switch was nonuniform with the maximum (up to 100 A/cm/sup 2/) at the load side of the plasma source. The ion flow at the load side of the switch consisted mostly of hydrogen ions, while in the near generator region C/sup +/ ions were dominant. The overall generation efficiency of the PPIB amounted to 30-50%.

Keywords

plasma switches; 1 mus; 280 kA; 500 kV; generation efficiency; ion flow current distribution; ion-irradiated region; materials processing; microsecond MARX generator; microsecond plasma opening switch; plasma source; potential electrode; pulse power ion beam source; Cathodes; Character generation; Current distribution; Electrodes; Hydrogen; Ion beams; Plasma applications; Plasma materials processing; Plasma sources; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Plasma Science, 1993. IEEE Conference Record - Abstracts., 1993 IEEE International Conference on

Conference_Location

Vancouver, BC, Canada

ISSN

0730-9244

Print_ISBN

0-7803-1360-7

Type

conf

DOI

10.1109/PLASMA.1993.593453

Filename

593453