Title :
Physical models of ultra thin oxide reliability in CMOS devices and implications for circuit reliability
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
An extensive review article on the physics of ultra-thin oxide breakdown in CMOS devices and circuits has recently been published (Stathis, IEEE Trans. Device and Materials Reliability, vol. 1, pp. 43-59, 2001, and Proc. 2001 Int. Reliability Physics Symp. p. 132, 2001.). This paper gives a brief summary and an update with some further comments on the subject.
Keywords :
CMOS integrated circuits; dielectric thin films; electric breakdown; integrated circuit modelling; integrated circuit reliability; reviews; CMOS circuits; CMOS devices; circuit reliability; physical models; ultra thin oxide reliability; ultra-thin oxide breakdown physics; Anodes; Charge carrier processes; Circuits; Electric breakdown; Hot carriers; Hydrogen; Semiconductor device modeling; Semiconductor process modeling; Stress; Substrate hot electron injection;
Conference_Titel :
Gate Insulator, 2001. IWGI 2001. Extended Abstracts of International Workshop on
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-021-6
DOI :
10.1109/IWGI.2001.967541
