DocumentCode :
1935570
Title :
Over-estimate of Thin Dielectric Lifetime in Single Doping Type Poly-Gate Capacitors
Author :
Wang, S.J. ; Chen, I.C. ; Tigelaar, H.L.
Author_Institution :
Semiconductor Process and Design Center, Texas Instruments
fYear :
1991
fDate :
17-19 June 1991
Keywords :
Breakdown voltage; CMOS technology; Capacitors; Dielectrics; Extrapolation; Life estimation; Life testing; Lifetime estimation; Semiconductor device doping; Stress;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 1991. 49th Annual
Conference_Location :
Boulder, CO, USA
Print_ISBN :
0-87942-647-0
Type :
conf
DOI :
10.1109/DRC.1991.664733
Filename :
664733
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1935570
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