DocumentCode :
1935590
Title :
Characterization and optimization of ZnO films for SAW devices
Author :
Sayago, I. ; Aleixandre, M. ; Fernández, M.J. ; Fontecha, J.L. ; Arés, L. ; Gutiérrez, F.J. ; Gracià, I. ; Horrillo, M.C.
Author_Institution :
Laboratorio de Sensores, IFA-CSIC, Madrid, Spain
fYear :
2005
fDate :
2-4 Feb. 2005
Firstpage :
509
Lastpage :
511
Abstract :
The piezoelectric characteristics of ZnO films obtained by RF magnetron sputtering in reactive plasma have been researched. ZnO films have been grown on SiO 2/Si (100) substrate using a zinc oxide target. Different RF power and reactive plasma have been tested to obtain a good piezoelectric material for SAW applications. Crystalline structures and morphological characteristics of the films were investigated by x-ray diffraction (XRD) and atomic force microscopy (AFM) respectively. "Al/ZnO/SiO 2-Si" configuration SAW devices were fabricated and characterized by frequency response measurements.
Keywords :
X-ray detection; aluminium; atomic force microscopy; crystal morphology; piezoelectric thin films; silicon compounds; sputter deposition; surface acoustic wave devices; wide band gap semiconductors; zinc compounds; AFM; RF magnetron sputtering; SAW device; XRD; atomic force microscopy; crystalline structure; frequency response measurement; morphological characteristic; piezoelectric characteristic; piezoelectric material; reactive plasma; x-ray diffraction; Atomic force microscopy; Piezoelectric films; Plasma applications; Plasma devices; Plasma materials processing; Plasma properties; Radio frequency; Sputtering; Surface acoustic wave devices; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices, 2005 Spanish Conference on
Conference_Location :
Tarragona
Print_ISBN :
0-7803-8810-0
Type :
conf
DOI :
10.1109/SCED.2005.1504500
Filename :
1504500
Link To Document :
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