DocumentCode
1935591
Title
Study of the Effective Valence Band Offset of Si/SiGe Heterojunctions with a Doping Interface Dipole
Author
Wilson, Stephen P. ; Allsopp, Duncan W E
Author_Institution
Department of Electronics, University of York, Heslington, YORK, YO1 5DD, ENGLAND.
fYear
1989
fDate
11-14 Sept. 1989
Firstpage
785
Lastpage
788
Abstract
The modulation of heterojunction band offsets by the addition of ultra thin p+ and n+ layers either side of the hetero-interface has been extensively modelled. It has been found that the resulting structure, the Doping Interface Dipole (DID), has a voltage tunable pseudo-offset dependent on structural parameters which can be readily controlled during epitaxial growth. The results have enabled a full understanding of the basic physics of DID´s and elucidate their possible device applications.
Keywords
Doping; Germanium silicon alloys; Heterojunctions; Ionization; Lattices; Molecular beam epitaxial growth; Semiconductor process modeling; Silicon germanium; Strain control; Structural engineering;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location
Berlin, Germany
Print_ISBN
0387510001
Type
conf
Filename
5436485
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