Title :
Study of the Effective Valence Band Offset of Si/SiGe Heterojunctions with a Doping Interface Dipole
Author :
Wilson, Stephen P. ; Allsopp, Duncan W E
Author_Institution :
Department of Electronics, University of York, Heslington, YORK, YO1 5DD, ENGLAND.
Abstract :
The modulation of heterojunction band offsets by the addition of ultra thin p+ and n+ layers either side of the hetero-interface has been extensively modelled. It has been found that the resulting structure, the Doping Interface Dipole (DID), has a voltage tunable pseudo-offset dependent on structural parameters which can be readily controlled during epitaxial growth. The results have enabled a full understanding of the basic physics of DID´s and elucidate their possible device applications.
Keywords :
Doping; Germanium silicon alloys; Heterojunctions; Ionization; Lattices; Molecular beam epitaxial growth; Semiconductor process modeling; Silicon germanium; Strain control; Structural engineering;
Conference_Titel :
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location :
Berlin, Germany
