Title :
Investigation of high field effects in SiC films
Author :
Sudarshan, Tangali S. ; Nunnally, W.C. ; Manriquez, A. ; Gradinaru, G.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of South Carolina, Columbia, SC, USA
Abstract :
Summary form only given. A focused research program on the high-field properties of SiC is being carried out. Prebreakdown and breakdown phenomena are studied. Surface flashover, a major limitation of PC switches with classical semiconductors (Si and GaAs), is investigated. The influence of the ambient dielectric quality and system configuration on the prebreakdown and breakdown response of the system is studied. The device characteristics and limits of operation at high voltages are analyzed using a time-coordinated nanosecond diagnostics to monitor the applied voltage and the device current. Optical emission signals from UV to IR range using (photomultiplier tubes) and spatially resolved digital imaging of light emission using an intensified, gatable CCD (charge coupled device) camera have been considered.
Keywords :
silicon compounds; GaAs; PC switches; Si; SiC films; breakdown phenomena; classical semiconductors; device current; gatable charged coupled device; high field effects; high voltages; light emission; optical emission signals; photomultiplier tubes; prebreakdown phenomena; spatially resolved digital imaging; surface flashover; time-coordinated nanosecond diagnostics; Charge-coupled image sensors; Dielectric breakdown; Electric breakdown; Flashover; Gallium arsenide; Nanoscale devices; Semiconductor films; Silicon carbide; Switches; Voltage;
Conference_Titel :
Plasma Science, 1993. IEEE Conference Record - Abstracts., 1993 IEEE International Conference on
Conference_Location :
Vancouver, BC, Canada
Print_ISBN :
0-7803-1360-7
DOI :
10.1109/PLASMA.1993.593454
