• DocumentCode
    1935654
  • Title

    Two-dimensional Simulation of SOI MOSFETs

  • Author

    Belhaddad, H. ; Poncet, A. ; Merckel, G.

  • Author_Institution
    Nucletudes S.A. Avenue du Hoggar, Z.A. Courtaboeuf BP 117 - F - 91944 LES ULIS Cedex
  • fYear
    1989
  • fDate
    11-14 Sept. 1989
  • Firstpage
    763
  • Lastpage
    766
  • Keywords
    Breakdown voltage; Character generation; Computational modeling; Computer simulation; Current measurement; Electric variables measurement; Integrated circuit modeling; Ionization; MOSFETs; Thickness measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
  • Conference_Location
    Berlin, Germany
  • Print_ISBN
    0387510001
  • Type

    conf

  • Filename
    5436488