Title :
RF performance limitation of high-k AlTiOx and Al2O3 gate dielectrics
Author :
Chin, Albert ; Chen, S.B. ; Chan, K.T. ; Hsieh, J.C. ; Chang, M.H. ; Lin, C.C. ; Liu, J. ; Chen, K.M.
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Taiwan
Abstract :
In this paper, we have characterized the RF performance of high-k Al/sub 2/O/sub 3/ and AlTiO/sub x/ capacitors and compared with SiO/sub 2/. We have found that significant k reduction occurs in high-k dielectric and SiO/sub 2/ at high frequencies and is strong material dependent. This may be a limitation of high-k dielectric. The relatively large shot noise in gate dielectric is strongly dependent on material and sensitive to defect generation after stress.
Keywords :
MOS capacitors; alumina; aluminium compounds; dielectric thin films; shot noise; titanium compounds; Al/sub 2/O/sub 3/; AlTiO; MOS capacitor; RF characteristics; defect generation; high-k gate dielectric; shot noise; Capacitance; Capacitors; Dielectric measurements; High K dielectric materials; High-K gate dielectrics; MOSFET circuits; Noise generators; Noise measurement; Radio frequency; Transmission line measurements;
Conference_Titel :
Gate Insulator, 2001. IWGI 2001. Extended Abstracts of International Workshop on
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-021-6
DOI :
10.1109/IWGI.2001.967548
