Title :
Electrical response of MOSiC gas sensors to CO, NO/sub 2/ and C/sub 3/H/sub 8/
Author :
Casals, O. ; Hernández-Ramírez, F. ; Barcones, B. ; Romano-Rodríguez, A. ; Serre, C. ; Pérez-Rodríguez, A. ; Morante, J.R. ; Godignon, P. ; Montserrat, J. ; Millan, J.
Author_Institution :
Dept. of Electron., Barcelona Univ., Spain
Abstract :
The behaviour as high temperature gas sensors of MOS capacitors and tunnel MOS diodes with Pt/TaSi x catalytic gates fabricated on 6H-SiC substrates is presented. The electrical characterization of the both types of devices as a function of the operating temperature and in the presence of gases CO, NO 2 and C 3H 8 has been performed. The best results have been obtained for MOS capacitors after their annealing in alternate pulses of 1% C 3H 8 and 1% O 2 at temperatures between 300 and 500°C. Their maximum response has been 80 mV to 1000 ppm of CO at 250°C and 71 mV to 10 ppm of NO 2 at 310°C. On the other hand, the tunnel MOS diodes show worse sensitive to these gases, with a maximum response of 1 mV to 1000 ppm of CO at 250°C and 600 μV to 10 ppm of NO 2 at 310°C.
Keywords :
MOS capacitors; annealing; carbon compounds; gas sensors; nitrogen compounds; silicon compounds; tunnel diodes; wide band gap semiconductors; 250 C; 310 C; 600 muV; 6H-SiC substrates; 71 mV; 80 mV; MOS capacitor; MOSiC gas sensor; Pt-TaSi/sub x/; annealing; catalytic gates; electrical response; high temperature gas sensor; tunnel MOS diode; Annealing; Diodes; Fabrication; Gas detectors; Gases; MOS capacitors; MOS devices; Silicon carbide; Temperature sensors; Voltage;
Conference_Titel :
Electron Devices, 2005 Spanish Conference on
Conference_Location :
Tarragona
Print_ISBN :
0-7803-8810-0
DOI :
10.1109/SCED.2005.1504507
