Title :
A Physical Model for the Characterization of SOI MOSFETs in Linear Operation
Author :
Flandre, D. ; Van De Wiele, F.
Author_Institution :
Laboratoire de Micro?lectronique, Universit? Catholique de Louvain, Place du Levant 3, 1348 Louvain-la-Neuve (Belgium)
Abstract :
The present paper deals with the electrical characterization of long-channel SOI MOSFET´s in linear operation. Limitations of previous analytical analyses are enphasized and a new physical model with a larger scope of application is presented. The model is shown to be in good agreement with I-V measurements performed on SOI MOSEET´s of various thicknesses, in strong inversion as well as in subthreshold operation.
Keywords :
Analytical models; Doping; MOSFETs; Poisson equations; Predictive models; Quasi-doping; Semiconductor films; Semiconductor process modeling; Substrates; Thickness measurement;
Conference_Titel :
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location :
Berlin, Germany
