DocumentCode
1935814
Title
CMOS-SOI Technologies for High Speed and Radiation Hard Circuits
Author
Auberton-Herve, A.J.
Author_Institution
C. E. A -IRDI- LETI Centre d´´Etudes Nucléaires de Grenoble, B. P. 85X 38041 GRENOBLE CEDEX - FRANCE
fYear
1989
fDate
11-14 Sept. 1989
Firstpage
740
Lastpage
748
Abstract
SOI is a very promising technology for CMOS-VLSI applications. The use of thin silicon film drastically improves the device characteristics. In this paper we will discuss the main trends to perform a CMOS-SOI technology for high-speed and rad-hard applications.
Keywords
CMOS technology; Circuits; Fabrication; Isolation technology; Radiation hardening; Semiconductor films; Silicon; Space technology; Temperature; Tin;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location
Berlin, Germany
Print_ISBN
0387510001
Type
conf
Filename
5436494
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