Novel Electrical Characterization of Edge Effects in SIMOX Transistors

We demonstrate that in order to get a better understanding of the parasitic edge conduction in silicon on insulator transistors and to evaluate the technological solutions proposed to avoid it, charge pumping, dynamic transconductance and noise measurements in addition to the static characteristics should be performed. The advantages of these complementary electrical characterization methods are illustrated by extracting new results related to the edge interface in SIMOX devices.