Physical characterisation of high-k gate stacks deposited on HF-last surfaces

Author

Bender, H. ; Conard, T. ; Nohira, H. ; Petry, J. ; Richard, O. ; Zhao, C. ; Brijs, B. ; Besling, W. ; Detavernier, C. ; Vandervorst, W. ; Caymax, M. ; Gendt, S. De ; Chen, J. ; Kluth, J. ; Tsai, W. ; Maes, J.W.

Author_Institution

IMEC, Belgium

fYear

2001

fDate

1-2 Nov. 2001

Firstpage

86

Lastpage

92

Abstract

By the combination of the analysis results of different complementary analysis techniques a methodology is established for the consistent determination of the growth curves for the ALCVD deposition of ZrO/sub 2/ and Al/sub 2/O/sub 3/ on HF-last surfaces. Consistency between all data requires the assumption of a lower film density than the bulk one of the different materials. The lower density is also determined independently by X-ray reflectivity (XRR) and is consistent with the thickness as determined by cross-section TEM.

Keywords

X-ray reflection; alumina; chemical vapour deposition; insulating thin films; semiconductor-insulator boundaries; transmission electron microscopy; zirconium compounds; ALCVD deposition; Al/sub 2/O/sub 3/; HF-last surfaces; Si; TEM; X-ray reflectivity; XRR; ZrO/sub 2/; film density; growth curves; high-k gate stacks; physical characterisation; Ellipsometry; High K dielectric materials; High-K gate dielectrics; Pollution measurement; Rough surfaces; Silicon; Spectroscopy; Surface contamination; Surface roughness; Surface treatment;

fLanguage

English

Publisher

ieee

Conference_Titel

Gate Insulator, 2001. IWGI 2001. Extended Abstracts of International Workshop on

Conference_Location

Tokyo, Japan

Print_ISBN

4-89114-021-6

Type

conf

DOI

10.1109/IWGI.2001.967553

Filename

967553