• DocumentCode
    1935904
  • Title

    Characterization of the Hot Carrier Related MOS Parameters Using Negative Feedback Circuits in VLSI CMOS

  • Author

    Takacs, D. ; Steger, M.

  • Author_Institution
    Siemens AG, Corporate Research and Development, Microelectronics, Otto Hahn Ring, 6 8000 Mÿnchen 83, FRG
  • fYear
    1989
  • fDate
    11-14 Sept. 1989
  • Firstpage
    723
  • Lastpage
    726
  • Abstract
    An external resistor in the collector circuit of the vertical bipolar transistor in CMOS was used to realize negative feedback into the MOST in the well. Using these feedback circuits a characterization technique for impact ionization related currents in VLSI CMOS was developed. The operating mode- and the operating point-dependent current gains and their influence on the measurable impact ionization current are discussed.
  • Keywords
    Bipolar transistors; CMOS process; Current measurement; Feedback circuits; Gain measurement; Hot carriers; Negative feedback; Thickness measurement; Very large scale integration; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
  • Conference_Location
    Berlin, Germany
  • Print_ISBN
    0387510001
  • Type

    conf

  • Filename
    5436498
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1935904