DocumentCode :
1935931
Title :
The Dependence of Channel Hot-carrier Degradation on Temperature in the Range 77K to 300K
Author :
Heremans, P. ; Van den bosch, G. ; Beilens, R. ; Groeseneken, G. ; Maes, H.E.
Author_Institution :
IMEC v.z.w. - Kapeldreef 75 - B3030 Leuven - Belgium; Research Assistant of the Belgian Fund for Scientific Research
fYear :
1989
fDate :
11-14 Sept. 1989
Firstpage :
727
Lastpage :
731
Abstract :
The temperature dependence of the hot-carrier degradation behavior of n-and p-channel transistors is investigated. It is found that the efficiency of hot-electrons and hot-holes to generate interface traps is reduced at low temperatures, and that this generation can therefore be characterized by a positive activation energy. The much larger degradation of current characteristics commonly observed for n-channel MOSFETs at 77 K is shown to originate from the larger influence of any local damage in the transistor channel at low temperatures. For p-channel transistors, however, the influence of trapped electrons near the drain on Id-Vg curves is not significantly dependent on temperature.
Keywords :
Charge carrier processes; Degradation; Density measurement; Electron traps; Energy measurement; Hot carriers; MOSFETs; Stress; Temperature dependence; Temperature distribution;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location :
Berlin, Germany
Print_ISBN :
0387510001
Type :
conf
Filename :
5436499
Link To Document :
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