Photo oxidation and PECVD stacked gate insulator for poly-Si TFTs at 200-300/spl deg/C

Author

Nakata, Yukihiko ; Okamoto, Tetsuya ; Hamada, Toshimasa ; Itoga, Takashi ; Ishii, Yutaka

Author_Institution

Syst. LCD Group Process Dev. Labs, Sharp Corp., Japan

fYear

2001

fDate

1-2 Nov. 2001

Firstpage

120

Lastpage

123

Abstract

We propose the photo oxide and PECVD stacked film for the gate insulator of poly-Si TFTs. The excellent SiO/sub 2/-Si interfaces with the interface trap density 2/spl sim/3/spl times/10/sup +10//cm/sup 2//eV was obtained by photo oxidation using a Xe excimer lamp at 200-300/spl deg/C. The stacked film of 4.3 nm photo oxide and 40 nm PECVD film at 300/spl deg/C without annealing has the excellent interface and the same J-E characteristics of 100 nm PECVD film with 600/spl deg/C anneal, despite the half film thickness.

Keywords

current density; dielectric thin films; elemental semiconductors; interface structure; oxidation; photochemistry; plasma CVD; silicon; thin film transistors; 100 nm; 200 to 300 C; 4.3 nm; 40 nm; 600 C; J-E characteristics; PECVD; PECVD film; SiO/sub 2/-Si; SiO/sub 2/-Si interfaces; Xe excimer lamp; annealing; film thickness; gate insulator; interface characteristics; interface trap density; photo oxidation; photo oxidation/PECVD stacked gate insulator; photo oxide; photo oxide film; poly-Si TFTs; Annealing; Insulation; Integrated circuit technology; Lamps; Liquid crystal displays; Oxidation; Plasma properties; Plasma temperature; Plasma waves; Semiconductor films;

fLanguage

English

Publisher

ieee

Conference_Titel

Gate Insulator, 2001. IWGI 2001. Extended Abstracts of International Workshop on

Conference_Location

Tokyo, Japan

Print_ISBN

4-89114-021-6

Type

conf

DOI

10.1109/IWGI.2001.967560

Filename

967560