• DocumentCode
    1936069
  • Title

    Transient Behaviour of UV-induced Interface States in Au/SiO2/n-Si Tunnel Structures

  • Author

    Bagnoli, P.E.

  • Author_Institution
    Istituto di Elettronica e Telecomunicazioni, Universita di Pisa, Via Diotisalvi 2, 56100 Pisa, Italy
  • fYear
    1989
  • fDate
    11-14 Sept. 1989
  • Firstpage
    707
  • Lastpage
    710
  • Abstract
    The generation and subsequent spontaneous decay of interface states in semi-transparent metal / tunnel oxide / silicon diodes after exposure to UV irradiation were studied by means of analysis of capacitance-voltage characteristics. The densities of the two groups of interface states, in communication with metal or semiconductor, were evaluated as a function of time using a recently proposed method which makes use of the slope and the voltage axis intercept of thle 1/C2 curve.
  • Keywords
    Capacitance; Capacitance-voltage characteristics; Gold; Interface states; Ionizing radiation; Large Hadron Collider; Schottky diodes; Semiconductor diodes; Silicon; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
  • Conference_Location
    Berlin, Germany
  • Print_ISBN
    0387510001
  • Type

    conf

  • Filename
    5436504
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1936069