Influence of SiO2/Si(111) interface structure on oxidation rate

X-ray photoelectron studies on the changes in SiO/sub 2//Si(111) interface structures and oxidation rates with the progress of oxidation were performed for oxide films formed using atomic oxygen at a substrate temperature of 400/spl deg/C. The following results are obtained for the same oxidation condition: 1) an atomically uniform oxidation reaction occurs at the SiO/sub 2//Si interface, 2) the oxidation rate changes periodically with the progress of oxidation and decreases significantly at specific interface structures. Therefore, it is revealed that the oxidation rate of Si is influenced by the SiO/sub 2//Si interface structure.