DocumentCode :
1936222
Title :
Anomalous Punchthrough in ULSI Buried-channel P-MOSFETs
Author :
Skotnicki, Tomasz ; Merckel, Gérard ; Pedron, Thierry
Author_Institution :
Centre National d´´Etude des Télécommunications (CNET-CNS), B.P. 98, Chemin du Vieux Chene 38243 Meylan, FRANCE
fYear :
1989
fDate :
11-14 Sept. 1989
Firstpage :
683
Lastpage :
686
Keywords :
CMOS process; Doping; Implants; MOSFET circuits; Numerical simulation; Power MOSFET; Power dissipation; Tellurium; Ultra large scale integration; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location :
Berlin, Germany
Print_ISBN :
0387510001
Type :
conf
Filename :
5436511
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1936222
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