Title :
N-induced interfacial roughness and defects in ultrathin Si oxynitride layers
Author :
Miyata, Noriyuki ; Ichikawa, Masakazu
Author_Institution :
Nat. Inst of Adv. Ind. Sci., Joint Res. Center for Atom Technol., Ibaraki, Japan
Abstract :
We use scanning reflection electron microscopy (SREM), scanning tunneling microscopy (STM), and spectroscopy (STS) to examine the interfacial roughness and atomic-scale defects in ultrathin Si oxynitride layers.
Keywords :
crystal defects; electron microscopy; interface roughness; scanning tunnelling microscopy; scanning tunnelling spectroscopy; semiconductor-insulator boundaries; silicon compounds; N-induced interfacial roughness; STM; Si; defects; scanning reflection electron microscopy; scanning tunneling microscopy; scanning tunneling spectroscopy; ultrathin Si oxynitride layers; Atomic layer deposition; Degradation; Reflection; Rough surfaces; Scanning electron microscopy; Spectroscopy; Stress; Surface cleaning; Surface roughness; Tunneling;
Conference_Titel :
Gate Insulator, 2001. IWGI 2001. Extended Abstracts of International Workshop on
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-021-6
DOI :
10.1109/IWGI.2001.967570
