Title :
Self-heating and Temperature Measurement in Sub-¿m-MOSFETs
Author :
Mautrý, P.G. ; Trager, J.
Author_Institution :
Siemens AG, HLT 131, Otto-Hahn-Ring 6, D-8000 Munich 83, FRG
Abstract :
For the first time we report the observation of lattice self-heating effects by temperature measurements inside sub-¿m MOSFETs and by dynamic drain current measurements with a time resolution of 3 ns. The temperature dependent electrical resistance of a polysilicon gate has been used as the temperature sensor. With decreasing channel length L the temperature increase rises faster than 1/L. For a n-channel MOSFET with design dimensions W/L = 10/0.6 ¿m the temperature rise approach 60 K at supply voltage of 5.0 V.
Keywords :
Density measurement; Electric variables measurement; Electrical resistance measurement; Length measurement; MOSFETs; Power measurement; Temperature dependence; Temperature distribution; Temperature measurement; Thermal conductivity;
Conference_Titel :
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location :
Berlin, Germany
