Title :
Fabrication and electrical characterization of ultra thin epitaxial γ-Al2O3 gate dielectric films on Si[100] by molecular beam epitaxy (MBE)
Author :
Shahjahan, M. ; Takahashi, N. ; Sawada, K. ; Ishida, M.
Author_Institution :
Dept. of Electr. & Electron. Eng., Toyohashi Univ. of Technol., Japan
Abstract :
We report the fabrication and electrical characterization of single crystalline epitaxial growth of ultra thin γ-Al/sub 2/O/sub 3/ insulator films with thickness of 3nm ∼ 4nm on n-Si[100] substrates by the MBE process. The effect of annealing on the leakage current and breakdown field was investigated. These films show good surface morphology, interface properties with D/sub it/ about 1 ∼3 × 10/sup 11/ cm/sup -2/ eV/sup -1/, extremely low leakage current density 2 × 10/sup -8/ A/cm/sup 2/ at a field of 3 MV/cm. These excellent properties make γ-Al/sub 2/O/sub 3/ a possible replacement gate oxide as demonstrated by the capacitance - voltage data at different frequencies for a metal insulator semiconductor (MIS) diode using 4 nm thick γ-Al/sub 2/O/sub 3/ as the insulator.
Keywords :
MIS structures; alumina; annealing; dielectric thin films; electric breakdown; interface states; leakage currents; molecular beam epitaxial growth; reflection high energy electron diffraction; surface structure; /spl gamma/-Al/sub 2/O/sub 3/ insulator film; 3 to 4 nm; Al/sub 2/O/sub 3/; MBE; MIS diode; Si; Si-Al/sub 2/O/sub 3/; Si[100]; annealing; breakdown field; capacitance - voltage; electrical characterization; interface density of states; interface properties; leakage current; low leakage current density; metal insulator semiconductor diode; molecular beam epitaxy; replacement gate oxide; surface morphology; ultra thin epitaxial /spl gamma/-Al/sub 2/O/sub 3/ gate dielectric films; Annealing; Crystallization; Dielectrics and electrical insulation; Electric breakdown; Epitaxial growth; Fabrication; Leakage current; Molecular beam epitaxial growth; Substrates; Surface morphology;
Conference_Titel :
Gate Insulator, 2001. IWGI 2001. Extended Abstracts of International Workshop on
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-021-6
DOI :
10.1109/IWGI.2001.967572
