Title :
A Three-Dimensional Model with Distributed Elements for GaAs MESFETs and Similar Devices
Author :
Wiesbeck, W. ; Haffa, S. ; Feldle, H.P.
Author_Institution :
University of Karlsruhe, 7500 Karlsruhe Germany
Abstract :
The technological advances in active microwave and mm-wave semiconductors like GaAs-MESFETs and HEMTs e.g. planar and recessed gate structures will result in the near future in components with cutoff frequencies of several hundred GHz. For modelling of these elements it is mandatory to take distributed elements and active and passive coupling into account. To realize this, a three-dimensional model has been developed, which involves distributed elements, coupling and wave propagation. The results show the typical effects of a slow and a fast wave propagation in lossy media with open-ended lines.
Keywords :
Electrodes; Equivalent circuits; FETs; Frequency; Gallium arsenide; MESFETs; Microwave devices; Mutual coupling; Propagation losses; Scattering parameters;
Conference_Titel :
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location :
Bologna, Italy
