DocumentCode :
1936309
Title :
Comparison Between Different Intermetallic Dielectric Processes and Consequences on Field Transistor Behaviour
Author :
Deleonibus, Simon ; Arena, C. ; Heitzmann, M. ; Martin, F. ; Lajzerowicz, J. ; Vinet, F.
Author_Institution :
LETI CENG Avenue des Martyrs, 38041 Grenoble Cedex France.
fYear :
1989
fDate :
11-14 Sept. 1989
Firstpage :
665
Lastpage :
668
Keywords :
Aluminum; Channel bank filters; Dielectrics; Hydrogen; Intermetallic; MOS devices; Metal-insulator structures; Random access memory; Voltage; Wet etching;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location :
Berlin, Germany
Print_ISBN :
0387510001
Type :
conf
Filename :
5436515
Link To Document :
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