• DocumentCode
    1936320
  • Title

    Kinetic study of ZrO2-CVD process

  • Author

    Kawamoto, T. ; Nishinaka, I. ; Shimogaki, Y.

  • Author_Institution
    Dept. of Mater. Eng., Univ. of Tokyo, Japan
  • fYear
    2001
  • fDate
    1-2 Nov. 2001
  • Firstpage
    164
  • Lastpage
    165
  • Abstract
    As silicon complementary MOS are scaled below 100 nm, high-k gate dielectrics will be required to obtain equivalent oxide thickness (EOT) < 1.0 nm. Among various candidates to replace SiO/sub 2/, ZrO/sub 2/ has attracted a lot of attention recently due to their thermodynamic stability in contact with Si. We investigated ZrO/sub 2/ gate application in terms of the ZrO/sub 2/ CVD process.
  • Keywords
    chemical vapour deposition; dielectric thin films; thermal stability; thermodynamic properties; zirconium compounds; 1.0 nm; 100 nm; ZrO/sub 2/; ZrO/sub 2/ gate application; ZrO/sub 2/-CVD process; equivalent oxide thickness; high-k gate dielectrics; kinetic study; thermodynamic stability; Amorphous materials; High K dielectric materials; Impurities; Inductors; Kinetic theory; Silicon; Substrates; Temperature; Thermal stability; X-ray scattering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Gate Insulator, 2001. IWGI 2001. Extended Abstracts of International Workshop on
  • Conference_Location
    Tokyo, Japan
  • Print_ISBN
    4-89114-021-6
  • Type

    conf

  • DOI
    10.1109/IWGI.2001.967574
  • Filename
    967574
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1936320