Title :
Electromigration in Narrow Al(Si) Stripes for VLSI: Comparison between MTF and Resistometric Methods for Life Predictions
Author :
Specchiulli, G. ; Fantini, F. ; De Santi, G.
Author_Institution :
Telettra S.p.A., Quality and Reliability Dept. - 20059 Vimercate-Italy
Abstract :
Al (1% Si) electromigration in narrow stripes was studied by means of MFT and resistometric methods. For very narrow stripes no correlation could be found between the variation of resistance and the end of life. A simple model was developed to explain the observed small resistance variation.
Keywords :
Electromigration; Equivalent circuits; FETs; Frequency; Gallium arsenide; MESFETs; Microwave devices; Mutual coupling; Scattering parameters; Very large scale integration;
Conference_Titel :
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location :
Bologna, Italy
