Title :
Preparation and characterization of ZrO2/Si structure
Author :
Sohgawa, M. ; Kitai, S. ; Kanda, H. ; Kanashima, T. ; Fujimoto, A. ; Okuyama, M.
Author_Institution :
Dept. of Phys. Sci., Osaka Univ., Japan
Abstract :
In this paper, we have prepared ZrO/sub 2/ and lanthanide oxide thin films by PLD (Pulsed Laser Deposition) method and characterized these electrical properties by using C-V and J-V characteristics and these interfacial properties by using PR spectroscopy.
Keywords :
capacitance; current density; dielectric thin films; elemental semiconductors; photoreflectance; pulsed laser deposition; semiconductor-insulator boundaries; silicon; zirconium compounds; C-V characteristics; J-V characteristics; PLD; PR spectroscopy; ZrO/sub 2/-Si; ZrO/sub 2//Si structure; electrical properties; interfacial properties; lanthanide oxide thin films; photoreflectance; pulsed laser deposition; Annealing; Capacitance-voltage characteristics; Frequency measurement; Gas lasers; Laser beams; Optical pulses; Probes; Pulsed laser deposition; Substrates; Temperature;
Conference_Titel :
Gate Insulator, 2001. IWGI 2001. Extended Abstracts of International Workshop on
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-021-6
DOI :
10.1109/IWGI.2001.967576
