Title :
A theoretical study on dielectric constants of SiO2-rich Zr silicates for high-k CMOS gate insulator applications
Author :
Hamada, T. ; Maruizumi, T.
Author_Institution :
Adv. Res. Lab., Hitachi Ltd., Tokyo, Japan
Abstract :
This study is the first theoretical attempt to investigate the unusually high dielectric constant of SiO/sub 2/-rich Zr silicates at the atomic level. Structures of two model SiO/sub 2/-rich Zr silicates were estimated by means of an electronic structure method, and electronic dielectric constants of the model silicates were calculated from their electronic structure. Results showed that the electronic dielectric constants of the model silicates are similar to that of SiO/sub 2/.
Keywords :
band structure; dielectric thin films; permittivity; zirconium compounds; SiO/sub 2/-rich Zr silicates; ZrSiO; dielectric constants; electronic dielectric constants; electronic structure; electronic structure method; high-k CMOS gate insulator applications; Chemicals; Dielectric constant; Dielectric materials; Dielectrics and electrical insulation; Hafnium; High K dielectric materials; High-K gate dielectrics; Laboratories; Linear discriminant analysis; Zirconium;
Conference_Titel :
Gate Insulator, 2001. IWGI 2001. Extended Abstracts of International Workshop on
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-021-6
DOI :
10.1109/IWGI.2001.967577
