Title :
ATiN/TiSi2 Interconnect Structure Durable for High Temperature Processing
Author :
Gloesener, D. ; Rivas, G. ; Goffin, B. ; Verlinden, P. ; Van de Wicle, F.
Author_Institution :
Laboratoire do Microélectronique, Université Catholique de Louvain, Place du Levant, 3 1348 Louvain-la Neuve, Belgium
Abstract :
A simple method has been developed to enhance the thermal stability of TiSi2. It allows a RTA reflow step at temperatures higher than 1000°c without any increase in TiSi2 resistivity nor degradation of the contact structure. Its efficiency has been separately demonstrated on a polycide process and on diffusion areas.
Keywords :
Contact resistance; Semiconductor films; Silicides; Silicon; Surface resistance; Temperature; Thermal resistance; Thermal stresses; Tin; Titanium;
Conference_Titel :
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location :
Berlin, Germany
