Monolithically-integrated antenna-coupled field-effect transistors for detection above 2 THz

Author

Boppel, Sebastian ; Lisauskas, Alvydas ; Bauer, Maris ; Hajo, Ahid S. ; Zdanevicius, Justinas ; Matukas, Jonas ; Mittendorff, Martin ; Winnerl, Stephan ; Krozer, Viktor ; Roskos, Hartmut G.

Author_Institution

Phys. Inst., Johann Wolfgang Goethe-Univ., Frankfurt am Main, Germany

fYear

2015

fDate

13-17 April 2015

Firstpage

1

Lastpage

3

Abstract

We discuss the modelling, implementation and characterization of antenna-coupled field-effect transistor detectors for THz frequencies. Detectors have been fabricated using a commercial 65-nm CMOS foundry process. At 4.1 THz resonance frequency and optimum operation conditions a responsivity of 86 V/W and noise-equivalent power of 113 pW/√Hz has been measured.

Keywords

CMOS integrated circuits; detector circuits; field effect transistors; monolithic integrated circuits; submillimetre wave antennas; submillimetre wave detectors; submillimetre wave transistors; CMOS foundry process; THz frequencies; antenna-coupled field-effect transistor detectors; frequency 4.1 THz; monolithically-integrated antenna; noise-equivalent power; resonance frequency; size 65 nm; Antennas; CMOS integrated circuits; CMOS technology; Detectors; Imaging; Logic gates; Transistors; CMOS detector; TeraFET; terahertz direct detection;

fLanguage

English

Publisher

ieee

Conference_Titel

Antennas and Propagation (EuCAP), 2015 9th European Conference on

Conference_Location

Lisbon

Type

conf

Filename

7228864