• DocumentCode
    1936506
  • Title

    HfO2 MIS structures with a silicon nitride barrier layer

  • Author

    Ota, Hiroyulu ; Migita, Shinji ; Morita, Yukinori ; Sakai, Shigeki

  • Author_Institution
    Adv. Semicond. Res. Center, Nat. Inst. of Adv. Ind. Sci. & Technol., Ibaraki, Japan
  • fYear
    2001
  • fDate
    1-2 Nov. 2001
  • Firstpage
    188
  • Lastpage
    190
  • Abstract
    In this paper, silicon nitride layer growth by using an rf plasma radical source and the barrier layer effects on the fabrication of HfO/sub 2/ MIS structures are investigated.
  • Keywords
    MIS structures; X-ray photoelectron spectra; chemical interdiffusion; diffusion barriers; hafnium compounds; plasma deposition; silicon compounds; HfO/sub 2/ MIS structures; HfO/sub 2/-Si/sub 3/N/sub 4/; XPS spectra; barrier layer effects; fabrication; rf plasma radical source; silicon nitride barrier layer; Capacitance-voltage characteristics; Capacitors; Chemicals; Diodes; Electrodes; Hafnium oxide; High definition video; Hysteresis; Silicon; Temperature dependence;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Gate Insulator, 2001. IWGI 2001. Extended Abstracts of International Workshop on
  • Conference_Location
    Tokyo, Japan
  • Print_ISBN
    4-89114-021-6
  • Type

    conf

  • DOI
    10.1109/IWGI.2001.967580
  • Filename
    967580
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1936506