Title :
HfO2 MIS structures with a silicon nitride barrier layer
Author :
Ota, Hiroyulu ; Migita, Shinji ; Morita, Yukinori ; Sakai, Shigeki
Author_Institution :
Adv. Semicond. Res. Center, Nat. Inst. of Adv. Ind. Sci. & Technol., Ibaraki, Japan
Abstract :
In this paper, silicon nitride layer growth by using an rf plasma radical source and the barrier layer effects on the fabrication of HfO/sub 2/ MIS structures are investigated.
Keywords :
MIS structures; X-ray photoelectron spectra; chemical interdiffusion; diffusion barriers; hafnium compounds; plasma deposition; silicon compounds; HfO/sub 2/ MIS structures; HfO/sub 2/-Si/sub 3/N/sub 4/; XPS spectra; barrier layer effects; fabrication; rf plasma radical source; silicon nitride barrier layer; Capacitance-voltage characteristics; Capacitors; Chemicals; Diodes; Electrodes; Hafnium oxide; High definition video; Hysteresis; Silicon; Temperature dependence;
Conference_Titel :
Gate Insulator, 2001. IWGI 2001. Extended Abstracts of International Workshop on
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-021-6
DOI :
10.1109/IWGI.2001.967580
