DocumentCode
1936527
Title
Frequency Dependent CV Measurements of GaAs/AlGaAs Heterostructures
Author
Berroth, M. ; Bosch, R. ; Hurm, V.
Author_Institution
Fraunhofer Institut fuer Angewandte Festkoerperphysik, Eckerstr. 4, 7800 Freiburg, FRG
fYear
1989
fDate
11-14 Sept. 1989
Firstpage
619
Lastpage
622
Abstract
A procedure is described to determine the carrier density profile in the channel of a FET by evaluating S-parameters measured over a broad frequency range. Applying this method to GaAs/AlGaAs heterostructures, a frequency dispersion of the gate capacitance has been found, which is attributed to a parasitic conducting channel.
Keywords
Capacitance measurement; Contact resistance; Electrical resistance measurement; FETs; Frequency dependence; Frequency measurement; Gallium arsenide; Parasitic capacitance; Schottky barriers; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location
Berlin, Germany
Print_ISBN
0387510001
Type
conf
Filename
5436524
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