• DocumentCode
    1936560
  • Title

    Nuclear Reaction Analysis of Electronic Materials - Part II: Instability Analysis of a-Si: H Solar Cell Material

  • Author

    Briere, M.A. ; Neitzert, H.C.

  • Author_Institution
    Hahn-Meitner-Institute Berlin GmbH, Dept. Dataprocessing and Electronics, D- 1000 Berlin 39, F. R. G.
  • fYear
    1989
  • fDate
    11-14 Sept. 1989
  • Firstpage
    623
  • Lastpage
    626
  • Abstract
    The hydrogen content is important to the performance of glow discharge amorphous silicon solar cells. In fact, a-Si:H was one of the first materials studied using the 15N NRA method [1]. However, there are some outstanding issues which must be addressed in order to understand the stability of this material in a stress environment (i. e. thermal annealing, radiation). The low temperature (20 - 400°C) diffusion of hydrogen in this material is also still of interest. Further, an investigation into the effects of doping on the concentration and spatial distribution of hydrogen in a-Si:H solar cell material is required.
  • Keywords
    Amorphous silicon; Annealing; Doping; Glow discharges; Hydrogen; Nuclear electronics; Photovoltaic cells; Stability; Temperature; Thermal stresses;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
  • Conference_Location
    Berlin, Germany
  • Print_ISBN
    0387510001
  • Type

    conf

  • Filename
    5436525