Rare earth metal oxide gate thin films prepared by e-beam deposition

Author

Ohmi, S. ; Akama, Seiki ; Kikuchi, A. ; Kashiwagi, I. ; Ohshima, C. ; Taguchi, J. ; Yamamoto, H. ; Kobayashi, C. ; Sato, K. ; Takeda, M. ; Oshima, K. ; Ishiwara, H. ; Iwai, H.

Author_Institution

Tokyo Inst. of Technol., Yokohama, Japan

fYear

2001

fDate

1-2 Nov. 2001

Firstpage

200

Lastpage

204

Abstract

In this paper, we report the results of the examination of various rare earth oxides for future CMOS gate insulator applications. The electrical and physical characteristics of various rare earth metal oxides have been investigated. Most of the rare earth metal oxides showed excellent electrical properties and smooth surface especially, La/sub 2/O/sub 3./ Other materials such as Dy/sub 2/O/sub 3/ and Lu/sub 2/O/sub 3/ showed good electrical characteristics in terms of frequency dependence, however, it was found that it is necessary to obtain the optimum process conditions (deposition temperature, RTA temperature, RTA ambient etc.) for each rare earth oxide material.

Keywords

MIS capacitors; electron beam deposition; energy gap; lattice energy; rapid thermal annealing; rare earth compounds; semiconductor-insulator boundaries; CMOS gate insulator applications; Dy/sub 2/O/sub 3/; La/sub 2/O/sub 3/; Lu/sub 2/O/sub 3/; MIS capacitor; MIS devices; RTA ambient; RTA temperature; Si; deposition temperature; e-beam deposition; electrical characteristics; frequency dependence; optimum process conditions; physical characteristics; rare earth metal oxide gate thin films; smooth surface; Atomic force microscopy; CMOS technology; Capacitance-voltage characteristics; Capacitors; High K dielectric materials; High-K gate dielectrics; Insulation; Leakage current; Sputtering; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Gate Insulator, 2001. IWGI 2001. Extended Abstracts of International Workshop on

Conference_Location

Tokyo, Japan

Print_ISBN

4-89114-021-6

Type

conf

DOI

10.1109/IWGI.2001.967583

Filename

967583