A circuit macromodel of high voltage LDMOS based on numerical simulation

Lateral double-diffused MOSFET (LDMOS) is widely used in power integrated circuits and microwave integrated circuits. So creating equivalent circuit of LDMOS is becoming more important. The previous models divided the on-state region of LDMOS into two parts, linear region and saturation region. The formulas and equivalent circuits are very complicated. This paper presents an I-V equation that is available in the whole on-state region by numerical simulation, and creates a macromodel of LDMOS circuits. The model contains fewer parameters that are easily extracted. Then we obtain a simpler equivalent circuit. Convergence becomes easier when using this equivalent circuit to simulate power integrated circuits. In the end, we give an application of our model.