DocumentCode :
1936584
Title :
Intrinsic Gettering : Sense or Nonsense ?
Author :
Vanhellemont, J. ; Claeys, C.
Author_Institution :
Interuniversity Micro-Electronics Center (IMEC), Kapeldreef 75, B-3030 Leuven, Belgium
fYear :
1987
fDate :
14-17 Sept. 1987
Firstpage :
331
Lastpage :
334
Abstract :
The implementation of intrinsic gettering in integrated circuit processing is discussed in view of new insights in the parameters influencing precipitate formation in silicon and in the dependence of the yield stress on point defect concentrations.
Keywords :
Cooling; Genetic expression; Gettering; Impurities; Integrated circuit yield; Silicides; Silicon; Surface contamination; Temperature; Tensile stress;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location :
Bologna, Italy
Print_ISBN :
0444704779
Type :
conf
Filename :
5436526
Link To Document :
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