DocumentCode
1936623
Title
Self-timed refreshing approach for dynamic memories
Author
Nyathi, Jabulani ; Rias, José G Delgado F
Author_Institution
Dept. of Electr. Eng., State Univ. of New York, Binghamton, NY, USA
fYear
1998
fDate
13-16 Sep 1998
Firstpage
169
Lastpage
173
Abstract
Refreshing dynamic circuits must be carried out before stored voltages reach unacceptable levels. In this paper we present CMOS circuitry that can be used to sense the integrity of stored data, provide timely refreshing to these dynamic circuits and provide high performance. Differential amplifiers are used to provide the difference between a degrading stored voltage and a reference voltage. This difference gets converted to a single-ended output which serves as the refresh trigger. Memory arrays are used as test beds to verify the functionality and effectiveness of these circuits. The circuits considered in this paper are suitable for use in high speed, low power and high density memory arrays
Keywords
CMOS memory circuits; DRAM chips; VLSI; differential amplifiers; high-speed integrated circuits; low-power electronics; timing; CMOS circuitry; degrading stored voltage; differential amplifiers; dynamic memories; high density memory arrays; high speed memory arrays; low power memory arrays; memory array test beds; reference voltage; refresh trigger; self-timed refreshing; single-ended output; Circuit testing; Clocks; Degradation; Differential amplifiers; Frequency; Leakage current; Power dissipation; Shift registers; Signal generators; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
ASIC Conference 1998. Proceedings. Eleventh Annual IEEE International
Conference_Location
Rochester, NY
ISSN
1063-0988
Print_ISBN
0-7803-4980-6
Type
conf
DOI
10.1109/ASIC.1998.722887
Filename
722887
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