Title :
A Distribution Function of Injected Electrons in the Planar Doped Barrier Transistors
Author :
Bannov, N.A. ; Svyatchenko, A.A.
Author_Institution :
Institute of Microelectronics, Academy of Sciences of the USSR, Yaroslavl
Abstract :
The injection properties of the planar doped barrier transistors (PDBT) at low temperature are investigated by means of numerical simulation. It is shown that due to the random distribution of the charged impurities electric field potential fluctuations may result in essential deviation of hot electrons injected from emitter into the base region from the direction normal to the layers of PDBT.
Keywords :
Distribution functions; Electric potential; Electron beams; Electron emission; Fluctuations; Microelectronics; Numerical simulation; Potential energy; Semiconductor impurities; Temperature distribution;
Conference_Titel :
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location :
Berlin, Germany
