DocumentCode :
1936635
Title :
Interface characterization of thin ZrO2/SiO2 films on silicon
Author :
Maeda, Takeshi ; Fukuda, Seiichi ; Kat, Yoshitake
Author_Institution :
Semicond. Leading Edge Technol. Inc., Ibaraki, Japan
fYear :
2001
fDate :
1-2 Nov. 2001
Firstpage :
210
Lastpage :
211
Abstract :
In this study, we investigated the properties of thin ZrO/sub 2//SiO/sub 2/ films on silicon using XPS, SIMS, backside (BS-) SIMS and TEM-EDX, focusing on the diffusion of the Zr into the Si substrate. The thermal stability of these films was also discussed.
Keywords :
X-ray photoelectron spectra; chemical interdiffusion; secondary ion mass spectra; semiconductor-insulator boundaries; silicon; silicon compounds; transmission electron microscopy; zirconium compounds; SIMS; Si; Si substrate; SiO/sub 2/; TEM-EDX; XPS; ZrO/sub 2/; diffusion; interface characterization; thermal stability; thin ZrO/sub 2//SiO/sub 2/ films; Annealing; Atomic measurements; Dielectrics; Etching; Hafnium; MOSFET circuits; Semiconductor films; Silicon; Sputtering; Zirconium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Gate Insulator, 2001. IWGI 2001. Extended Abstracts of International Workshop on
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-021-6
Type :
conf
DOI :
10.1109/IWGI.2001.967585
Filename :
967585
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1936635
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