• DocumentCode
    1936657
  • Title

    Evaluation of Electromigration Activation Energy by Means of Noise Measurements and MTF Tests

  • Author

    Diligenti, A. ; Bagnoli, P.E. ; Neri, B. ; Specchiulli, G.

  • Author_Institution
    Istituto di Elettrornica e Telecomunicazioni, Facola di Ingegneria, UniversitÃ\xa0 di Pisa, V: a Diotisalvi, 2, I-56100 Pisa, Italy
  • fYear
    1987
  • fDate
    14-17 Sept. 1987
  • Firstpage
    213
  • Lastpage
    216
  • Abstract
    Activation energy Ea of grain-boundary vacancies was evaluated by means of noise measurements and MTF tests in narrow Al/Si (1%) resistors. The values obtained by these techniques are 0.93 and 0.96 eV respectively. Noise measuremen-ts revealed that after every temperature change the microstructure of the films was unstable. The presence of instabilities can strongly affect the Ea value.
  • Keywords
    Contact resistance; Current density; Electromigration; Fluctuations; Frequency; Microstructure; Noise measurement; Resistors; Testing; Thermal resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
  • Conference_Location
    Bologna, Italy
  • Print_ISBN
    0444704779
  • Type

    conf

  • Filename
    5436529
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1936657