Title :
Evaluation of Electromigration Activation Energy by Means of Noise Measurements and MTF Tests
Author :
Diligenti, A. ; Bagnoli, P.E. ; Neri, B. ; Specchiulli, G.
Author_Institution :
Istituto di Elettrornica e Telecomunicazioni, Facola di Ingegneria, UniversitÃ\xa0 di Pisa, V: a Diotisalvi, 2, I-56100 Pisa, Italy
Abstract :
Activation energy Ea of grain-boundary vacancies was evaluated by means of noise measurements and MTF tests in narrow Al/Si (1%) resistors. The values obtained by these techniques are 0.93 and 0.96 eV respectively. Noise measuremen-ts revealed that after every temperature change the microstructure of the films was unstable. The presence of instabilities can strongly affect the Ea value.
Keywords :
Contact resistance; Current density; Electromigration; Fluctuations; Frequency; Microstructure; Noise measurement; Resistors; Testing; Thermal resistance;
Conference_Titel :
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location :
Bologna, Italy
